X-Ray Photoelectron Spectroscopy

PHI Genesis Capabilities

• Heating/Cooling Stage and Intro: In-situ heating/cooling experimentation is possible through a temperature range of -120 ℃ to 600 ℃ on the stage. The heating and cooling of the Intro chamber is controllable from -150 ℃ to 600 ℃.
• Secondary Electron Images (SXI): SXI can be generated by scanning a focused sub-5 μm X-ray beam across the sample. The image can be used to navigate to areas of interest and to select areas for analysis in real time, just like SEM.
• Dual-Source (Monoatomic/Cluster) Ar Ion Gun: Besides the standard monatomic Ar Ion Gun, it also equips with an argon Gas Cluster Ion Beam (GCIB) gun for nondestructive profiling of polymers and other organic materials.
• Ultraviolet Photoelectron Spectroscopy (UPS): He I or He II photons can be produced for characterization of the occupied (valence) electronic states of solid materials with higher energy resolution than XPS. A spectrum can be produced to reveal the ionization energy and the highest occupied molecular orbital (HOMO) of a material.
• Low Energy Inverse Photoelectron Spectroscopy (LEIPS): LEIPS is used for characterization of the unoccupied (conduction) electronic states with a low energy electron source to preserve sample chemical structure during analysis. Two spectra can be produced to reveal the electron affinity and the lowest unoccupied molecular orbital (LUMO) of a material. UPS and LEIPS in combination can provide important information about the electronic band structure of semiconducting materials.
• Reflection Electron Energy Loss Spectroscopy (REELS): REELS is used for measurement of electronic band gaps and structural characterization of materials, e.g., excited atomic states, valence band transitions.

Basic XPS Capabilities

• Detection limits: all elements except H and He.
• Measurement depth: 1 – 5 nm.
• Spot sizes: 5 – 200 µm.
• Sample size: Samples must fit either a 40 x 40 mm platen (can accommodate up to 20 mm thick samples); or a 80 x 80mm platen (can accommodate up to 17 mm thick samples); or a tilt platen (can accommodate up to 3 mm thick samples) with 57 x 12 mm mounting area.
• Spectrometer: Monochromatized Al Kα source; vacuum ~ 1.2×10^-7 Pa.

Basic UPS Capabilities

• Detection limits: highest binding energy detectable is 17 eV.
• Measurement depth: 1 – 5 nm.
• Spot sizes: 1-2 mm.
• Sample size: Samples must fit either a 40 x 40 mm platen (can accommodate up to 20 mm thick samples); or a 80 x 80mm platen (can accommodate up to 17 mm thick samples); or a tilt platen (can accommodate up to 3 mm thick samples) with 57 x 12 mm mounting area.
• Additional: A manual attenuation filter shutter with 3 positions (open, attenuated, close) is available for UPS source to prevent super saturation.

Basic LEIPS Capabilities

• Detection limits: sample bias range is -9 to 9 V.
• Measurement depth: <1 nm.
• Spot sizes: 1-2 mm.
• Sample size: Samples must fit the tilt platen (can accommodate up to 3 mm thick samples) with 57 x 12 mm mounting area.
• Measuring angle: 140 °C due to the configuration of the source.
• Optical band pass filters: Besides normally used 214 nm (5.79 eV) and 260 nm (4.77 eV), 193 nm (6.42 eV), 340 nm (3.65 eV), 285 nm (4.35 eV), 280 nm (4.42 eV), 214 nm (5.79 eV) and 254 nm (4.88 eV in combination with an infrared cut filter) are also available to accommodate additional needs.

Contact Information

Acknowledgements

Resources

• XPS 101
• Genesis XPS Introduction
• Genesis UPS, LEIPS, REELS Introduction
• XPS Multipak Manual
• CasaXPS Manual