Power Microsystems
Project Examples
(Ordered from recent to past, reflecting Ph.D. dissertations and related publications)
Microfluidic RF Communication System for Data Retrieval
Radiofrequency identification (RFID), especially passive RFID, is widely used in industrial applications to track and trace products, assets, and material flows. As technology advances, the trend toward increasingly miniaturized RFID sensor tags is expected to continue, though miniaturization poses challenges for maintaining adequate communication coverage. Recent efforts have explored the use of metamaterials in RFID technology to enhance power transfer efficiency by leveraging their unique ability to manipulate electromagnetic waves. In particular, metamaterials are finding growing applications in far-field RFID systems. Here, we present the development of a magnetic metamaterial and local field enhancement package that significantly boosts near-field magnetic strength, resulting in a substantial increase in power transfer efficiency between reader and tag antennas. Applying this magnetic metamaterial and local field enhancement package to near-field RFID technology provides high power transfer efficiency and expanded communication coverage, opening new possibilities for the rapidly growing Internet of Things (IoT) landscape.
| Representative Publications (# denotes supervised by X. Zhang; * denotes corresponding author: X. Zhang) |
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Metamaterial-enhanced near-field readout platform for passive microsensor tags
K. Wu#, G. Duan#, X. Zhao#, C. Chen#, S.W. Anderson, X. Zhang* Microsystems & Nanoengineering — Nature, 2022, 8: 28 +AbstractRadiofrequency identification (RFID), particularly passive RFID, is extensively employed in industrial applications to track and trace products, assets, and material flows. The ongoing trend toward increasingly miniaturized RFID sensor tags is likely to continue as technology advances, although miniaturization presents a challenge with regard to the communication coverage area. Recently, efforts in applying metamaterials in RFID technology to increase power transfer efficiency through their unique capacity for electromagnetic wave manipulation have been reported. In particular, metamaterials are being increasingly applied in far-field RFID system applications. Here, we report the development of a magnetic metamaterial and local field enhancement package enabling a marked boost in near-field magnetic strength, ultimately yielding a dramatic increase in the power transfer efficiency between reader and tag antennas. The application of the proposed magnetic metamaterial and local field enhancement package to near-field RFID technology, by offering high power transfer efficiency and a larger communication coverage area, yields new opportunities in the rapidly emerging Internet of Things (IoT) era.
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A magnetically coupled communication and charging platform for microsensors
G. Duan#, X. Zhao#, X. Zhang* Journal of Microelectromechanical Systems, 2017, 26(5): 1099-1109 +AbstractA double layer spiral antenna with side length of 740 µm was fabricated by a multilayer electroplating process and bonded with an radio frequency identification chip by silver epoxy to form a microsensor chip. A theoretical power transfer model was built to optimize the power transfer efficiency. The resonant frequency of the microsensor was characterized inside a small coupling loop, exhibiting a high degree of agreement with theoretical results. A magnetically coupled communication and charging platform was developed to work with the microsensors. The reader antenna was composed of a coupling loop and a secondary coil with 40-mm diameter wrapped around a polycarbonate tube. To maximize the magnetic field generated inside the secondary coil, a lump circuit model was built and its resonant modes were analyzed. The maximum current inside the secondary coil was achieved at the serial resonant frequency, at which the current followed a sinusoidal distribution along the coil. The magnetic field distribution inside the coil was calculated to analyze the read-out of the reader antenna. The communication and power transfer was demonstrated with the microsensors flowing through the reader antenna by successfully retrieving the sensor ID.
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Microfluidic channel-based wireless charging and communication platform for microsensors with miniaturized onboard antenna
G. Duan#, X. Zhao#, H.R. Seren#, C. Chen#, A. Li#, X. Zhang* Journal of Micromechanics and Microengineering, 2016, 26(12): 124002 +AbstractA double layer spiral antenna with side length of 380 µm was fabricated by a multi-step electroplating process, and integrated with a commercialized passive RFID chip to realize the RF power harvesting and communication functions of a microsensor. To power up and communicate with the microchips, a single layer spiral reader antenna was fabricated on top of a glass substrate with side length of 1 mm. The microchips and the reader antenna were both optimized at the frequency of 915 MHz. Due to the small size of the reader antenna, the strength of the magnetic field decreased dramatically along the axial direction of the reader antenna, which limited the working distance to within 1 mm. To enclose the microchips within the reading range, a three-layer microfluidic channel was designed and fabricated. The channel and cover layers were fabricated by laser cutting of acrylic sheets, and bonded with the glass substrate to form the channel. To operate multiple microchips simultaneously, separation and focusing function units were also designed. Low loss pump oil was used to transport the microchips flowing inside the channel. Within the reading area, the microchips were powered up, and their ID information was retrieved and displayed on the computer interface successfully.
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Enabling a microfluidic RFID readout system via miniaturization and integration
H.R. Seren#, X. Zhao#, C. Chen#, C. Wang#, X. Zhang* Journal of Microelectromechanical Systems, 2015, 24(2): 395-403 +AbstractWe present a microfluidic read-out platform concept for miniaturized radio-frequency identification (RFID) tags that will help identifying natural underground sources. Designed microfluidic platform has embedded spiral reader antennas for data communication via near field magnetic coupling. To enable near field magnetic coupling with the reader antennas at reasonably low frequencies, we developed electrically ultrasmall (380 µm × 380 µm × 15 µm with resonance ~0.75 GHz) on-chip antennas. Concept feasibility was proven by a set of experiments. First, data communication between an RFID reader and a printed circuit board-level passive tag was demonstrated through miniaturized antennas. Second, coupling between passive reader and on-chip antennas was shown inside the fluidic environment. In addition, a chip separation mechanism was introduced to the platform to prevent cross-coupling events between RFID tags.
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Micro Gas Chromatography for On-Chip Sensing and Analysis
The objective of this research is to develop a highly sensitive, mechanically robust, and mass-producible gas micro-detector designed for integration into a portable micro-gas chromatographic system capable of competing with the performance of traditionally laboratory instrumentation. The approach involves optimizing the performance and sensitivity of the detector by modeling, analyzing, and experimentally validating various heat flux pathways from the detector’s active element. In addition, the modeling and testing processes are conducted to ensure the detector’s resilience to mechanical shock and its compatibility with a wide range of thermal and chemical operating environments. In the pursuit of novel gas sensors and detection mechanisms, limited effort has been directed toward improving thermal conductivity detectors—one of the oldest gas sensor technologies. However, thermal conductivity detectors are particularly well-suited for miniaturization, as they are sensitive to the concentration of components in a mixture rather than the total sample mass—a limitation of flame ionization detectors and mass spectrometers. As a result, miniaturized gas chromatographic systems employing thermal conductivity detectors can maintain functional sensitivity while handling smaller sample volumes, with the added benefits of lower power consumption and improved mechanical robustness. The development of a highly sensitive, yet simple and durable detector—integrated into a miniaturized system—positions gas chromatography to have a broader impact across various fields. These include point-of-care health diagnostics, homeland security, industrial process control, and geological exploration.
| Representative Publications (# denotes supervised by X. Zhang; * denotes corresponding author: X. Zhang) |
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Temperature distribution on thermal conductivity detectors for flow rate insensitivity
B.C. Kaanta#, A.J. Jonca#, H. Chen, and X. Zhang* Sensors and Actuators A: Physical, 2011, 167(2): 146-151 +AbstractA thermal conductivity detector (TCD) design that is minimally affected by changing flow rates in the microchannel is presented. In gas chromatography systems, pressure fluctuations can result in false peaks and an unstable baseline, reducing the limit of detection. Theories of TCD operation have suggested that the center region of a detector is minimally affected by changing carrier gas flow rates. However, these theories assume that the detector elements are maintained at a constant temperature along their entire length, which is incorrect. We have performed testing and modeling to determine the accuracy of this assumption and its effects on overall TCD performance. We developed a model of multiple resistively heated TCD elements, which calculated that flow invariance can still be achieved even without perfectly constant temperature elements. A fabricated multiple element TCD was tested to show how the development of a flow rate invariant detector can be used to reduce the complexity and increase the portability of gas chromatography systems.
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Effect of forced convection on thermal distribution in micro thermal conductivity detectors
B.C. Kaanta#, H. Chen, and X. Zhang* Journal of Micromechanics and Microengineering, 2011, 21(4): 045017 +AbstractAccurate knowledge of flow rate is critical when quantifying analytes in a chromatographic separation. Using the flow rate, the area of a peak and the response factor of a detector one can calculate the total quantity of the analyte being examined. To date, this quantification has not been possible since no in situ method for flow rate detection within a detector existed. We have developed and tested a novel device and method for measuring the linear flow rate in a micro-gas chromatography (GC) system. Our design utilizes a high-sensitivity micro thermal conductivity detector (µTCD), which is capable of replacing a traditional TCD and requires no calibration for the precise measurement of flow rates. Furthermore, this measurement occurs exactly where the solute elutes from the GC separation column, the point at which knowledge of flow rate is most critical for analyte quantification. To the best of our knowledge, no other method of measuring the flow rate directly at the sensor currently exists.
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A monolithically fabricated gas chromatography separation column with an integrated high sensitivity thermal conductivity detector
B.C. Kaanta#, H. Chen, and X. Zhang* Journal of Micromechanics and Microengineering, 2010, 20(5): 055016 +AbstractThe monolithic integration of a high sensitivity detector with a gas chromatography (GC) separation column creates many potential advantages over the discrete components of a traditional chromatography system. In miniaturized high-speed GC systems, component interconnections can cause crucial errors and loss of fidelity during detection and analysis. A monolithically integrated device would eliminate the need to create helium-tight interconnections, which are bulky and labor intensive. Additionally, batch fabrication of integrated devices that no longer require expensive and fragile detectors can decrease the cost of micro GC systems through economies of scale. We present the design, fabrication and operation of a monolithic GC separation column and detector. Our device is able to separate nitrogen, methane and carbon dioxide within 30 s. This method of device integration could be applied to the existing wealth of column geometries and chemistries designed for specialized applications.
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| Ph.D. Dissertation |
| MEMS thermal conductivity sensor with flow rate detection and invariance for gas chromatography systems Bradley Kaanta, Ph.D. Dissertation, Boston University (Advisor: Xin Zhang; January 2011) |
Material Behavior and Thermal Management in Microscale Systems
Our research explores the mechanical integrity and thermal performance of thin films and nanostructured materials, with a focus on applications in microelectromechanical systems (MEMS), integrated circuits, and emerging nanoscale technologies. We investigate how materials such as plasma-enhanced chemical vapor deposited (PECVD) silicon oxide, silicon nitride, silicon oxynitride, and silicon oxycarbide respond to mechanical loading and thermal cycling. Using techniques including nanoindentation, microbridge testing, and wafer curvature analysis, we probe stress evolution, creep, plastic deformation, and fracture toughness—revealing strong dependencies on film thickness, composition, microstructure, and post-deposition annealing. Our recent work also examines nanoscale thermal transport, studying how localized heating and interfacial phenomena—such as plasmonic resonances and quasi-ballistic phonon transport—influence heat dissipation in materials like graphene and carbon nanotubes. These investigations deepen our understanding of material behavior at small scales and guide the development of robust, thermally efficient materials and structures for next-generation electronics, sensors, and power and energy systems.
| Representative Publications (# denotes supervised by X. Zhang; * denotes corresponding author: X. Zhang) |
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Ballistic transport enhanced heat convection at nanoscale hotspots
S. Xu, Y. Xu, J. Zhang, J. Gao, X. Wang, X. Zhang, Y. Yue# Journal of Applied Physics, 2024, 136(16): 164306 +AbstractAlong with device miniaturization, severe heat accumulation at unexpected nanoscale hotspots attracts wide attentions and urges efficient thermal management. Heat convection is one of the important heat dissipating paths at nanoscale hotspots but its mechanism is still unclear. Here shows the first experimental investigation of the convective heat transfer coefficient at size-controllable nanoscale hotspots. A specially designed structure of a single-layer graphene supported by gold-nanorod array is proposed, in which the gold nanorods generate hundreds of nanometers heating sources under laser irradiation and the graphene layer works as a temperature probe in Raman thermometry. The determined convective heat transfer coefficient (1928+155 –147 W m−2 K−1 for the 330 nm hotspot and 1793+157 –159 W m−2 K−1 for the 240 nm hotspot) is about three orders of magnitude higher than that of nature convection, when the simultaneous interfacial heat conduction and radiation are carefully evaluated. Heat convection, thus, accounts to more than half of the total energy transferred across the graphene/gold nanorods interface. Both the plasmon induced nanoscale hotspots and ballistic convection of air molecules contribute to the enhanced heat convection. This work reveals the importance of heat convection at nanoscale hotspots to the accurate thermal design of miniaturized electronics and further offers a new way to evaluate the convective heat transfer coefficient at nanoscale hotspots.
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High thermal conductivity of free-standing skeleton in graphene foam
J. Gao, D. Xie, X. Wang, X. Zhang, Y. Yue# Applied Physics Letters, 2020, 117(25): 251901 +AbstractDue to the high-porosity structure, the low thermal transport property of graphene foam (GF) is expected. However, the interconnected skeleton can still act as excellent thermal conductor branches if phonon scattering is not severely affected in the structure of graphene flakes. Such a property has not been validated experimentally due to the difficulty in sample manipulation and the fragility of the structure. In this work, we report the characterization results of thermal properties of the free-standing skeleton in GF. Three individual skeleton samples from one GF piece are prepared under the same condition. The thermal diffusivity of GF skeletons is characterized in the range of 3.26–3.48 × 10−4 m2/s, and the thermal conductivity is determined to be 520–555 W/(m K), which is two orders of magnitude larger than the value of bulk GF. These high thermal conductivity values originate from the intrinsic thermal property of graphene, while the contact interfaces, wrinkled structures, and defects induced in the synthesis process do not affect the phonon transport property significantly, which proves that the three-dimensional hierarchical graphene structure can still be implemented in energy-intensive applications.
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Graphene nanofluids as thermal management materials: Molecular dynamics study on orientation and temperature effects
J. Gao, H. Wu, A. Li#, Y. Yue#, D. Xie, X. Zhang* ACS Applied Nano Materials, 2019, 2(11): 6828-6835 +AbstractThe dispersion of graphene nanoparticles in a fluid can enhance the thermophysical properties of the base liquid. The physics behind such a phenomenon has yet to be uncovered in the community. In this work, thermal transport in a graphene–water mixture is studied by classical molecular dynamics simulations. Several factors including orientation angle, curvature, thermal rectification, temperature, and van der Waals interaction are investigated, and special attention is paid to the effect on thermal conductance across graphene–water interfaces. It is found that thermal conductance increases from 13.92 to 26.70 MW/m2 K as the orientation angle is increased from 0° to 90°. When the curved graphene is introduced by altering the length to width ratio from 1.0 to 1.8, the thermal conductance is elevated. However, as the length to width ratio exceeds 1.8, such a trend does not continue due to the variation of the intrinsic thermal conductivity of graphene and the formation of the complex graphene–water interface. Even though the curved graphene introduces an asymmetric assembly, no thermal rectification effect is observed for diverse directions of heat flux. It is demonstrated that the enhancement of overall thermal conductance of nanofluids is ascribed to the interface thermal transport rather than the base liquid with increasing temperature. This correlation is suppressed in a hydrophilic interface due to the structural change of liquid layer adjacent to the interface.
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Plasmonic heating induced by Au nanoparticles for quasi-ballistic thermal transport in multi-walled carbon nanotubes
Y. Xu+, X. Zhao#+, A. Li#, Y. Yue#, J. Jiang, X. Zhang* Nanoscale, 2019, 11(16), 7572-7581 +AbstractThe plasmon resonances of nanostructures enable wide applications from highly sensitive sensing to high-resolution imaging, through the improvement of photogeneration rate stimulated by the local field enhancement. However, quantitative experimental studies on the localized heating and the thermal transport process in the vicinity of plasmonics are still lacking because of the diffraction limit in conventional optothermal methodologies. In this work, we demonstrate an approach based on Raman thermometry to probe the near-field heating caused by plasmonics. An array of Au nanoparticles (AuNPs) fabricated by the template-assisted method is used to generate the near field effect. Multi-walled carbon nanotubes (MWCNTs) dispersed on the AuNPs are employed to quantify the near-field heating from their Raman peak shifts. Results show that the temperature rise in MWCNTs on AuNPs is much higher than that in a control group under the same laser irradiation. Further analysis indicates that the enhanced photon absorption of MWCNTs attributed to plasmon resonances is partially responsible for the different heating effect. The nonuniform thermal hot spots at the nanoscale can result in the quasi-ballistic thermal transport of phonons in MWCNTs, which is another reason for the temperature rise. Our results can be used to understand plasmonic heating effects as well as to explore quasi-ballistic thermal transport in carbon-based low-dimensional materials by tailoring the geometry or size of plasmonic nanostructures.
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Characterization of the Young’s modulus and residual stresses for a sputtered silicon oxynitride film using micro-structures
J. Dong#, P. Du#, X. Zhang* Thin Solid Films, 2013, 545: 414-418 +AbstractSilicon oxynitride (SiON) is an important material to fabricate micro-electro-mechanical system (MEMS) devices due to its composition-dependent tunability in electronic and mechanical properties. In this work, the SiON film with 41.45% silicon, 32.77% oxygen and 25.78% nitrogen content was deposited by RF magnetron sputtering. Two types of optimized micro-structures including micro-cantilevers and micro-rotating-fingers were designed and fabricated using MEMS surface micromachining technology. The micro-cantilever bending tests were conducted using a nanoindenter to characterize the Young’s modulus of the SiON film. Owing to the elimination of the residual stress effect on the micro-cantilever structure, higher accuracy in the Young’s modulus was achieved from this technique. With the information of Young’s modulus of the film, the residual stresses were characterized from the deflection of the micro-rotating-fingers. This structure was able to locally measure a large range of tensile or compressive residual stresses in a thin film with sufficient sensitivities. The results showed that the Young’s modulus of the SiON film was 122 GPa and the residual stresses of the SiON film were 327 MPa in the crystallographic orientation of the wafer and 334 MPa in the direction perpendicular to the crystallographic orientation, both in compression. This work presents a comprehensive methodology to measure the Young’s modulus and residual stresses of a thin film with improved accuracy, which is promising for applications in mechanical characterization of MEMS devices.
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Effects of composition and thermal annealing on the mechanical properties of silicon oxycarbide films
P. Du#, X. Wang#, I-K Lin#, X. Zhang* Sensors and Actuators A: Physical, 2012, 176: 90-98 +AbstractThere is an increasing trend to incorporate silicon carbide (SiC) into silicon oxides to improve the mechanical properties, thermal stability, and chemical resistance. In this work the silicon oxycarbide (SiOC) films were deposited by RF magnetron co-sputtering from silicon dioxide and silicon carbide targets. Subsequently rapid thermal annealing was applied to the as-deposited films to tune the mechanical properties. Energy dispersive spectroscopy, scanning electron microscopy, Fourier transform infrared spectroscopy and ellipsometry were employed to characterize the compositions and microstructure of the films. The residual stress of the films was calculated from the film–substrate curvature measurement using Stoney’s equation. The film stress changed from compressive to tensile after annealing, and it generally increased with carbon contents. The Young’s modulus and hardness were investigated by the depth-sensing nanoindentation, which were found to increase with the carbon content and annealing temperature. A thorough microstructural analysis was conducted to investigate the effect of carbon content and annealing temperature on the mechanical properties of SiOC films.
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Mechanical property characterization of sputtered and plasma enhanced chemical deposition (PECVD) silicon nitride films after rapid thermal annealing
P-H Wu, I-K Lin#, H-Y Yan, K-S Ou, K-S Chen, X. Zhang* Sensors and Actuators A: Physical, 2011, 168(1): 117-126 +AbstractIn this paper, the mechanical and fracture properties of silicon nitride films subjected to rapid thermal annealing (RTA) have been systemically tested. The residual stress, Young’s modulus, hardness, fracture toughness, and interfacial strength of both sputtered and plasma-enhanced chemical vapor deposition (PECVD) silicon nitride films deposited on silicon wafers were measured and compared. The results indicated that the Young’s modulus and hardness of both types of silicon nitride films significantly increased when the RTA temperature increased. Furthermore, RTA processes could also alter the state of residual stress. The initial residual compressive stress of sputtered silicon nitride film was gradually relieved, and the film became tensile after the RTA process. For PECVD silicon nitride, the tensile residual stress reached its peak after a 600 °C RTA, then dropped after further increases in RTA temperature, due to stress relaxation. The tendency of the equivalent fracture toughness was to exhibit a strong correlation with that shown in the residual stress of silicon nitride. By considering the effect of residual stress, the real fracture toughness of both types of silicon nitride films were slightly enhanced by using RTA processes. Finally, experimental results indicated that the interfacial strength of PECVD silicon nitride could also be significantly improved by RTA processes at 600–800 °C. On the other hand, the initial interfacial strength of the sputtered silicon nitride was sufficiently strong, and the RTA processes only resulted in minor improvements. The characterization flow could be applied to other brittle films, and these specific test results should be useful for improving the structural integrity and process optimization of related MEMS and IC applications.
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Mechanical properties of sputtered silicon oxynitride films by nanoindentation
Y. Liu#, I-K Lin#, X. Zhang* Materials Science and Engineering A, 2008, 489(1-2): 294-301 +AbstractSilicon oxynitride (SiON) has received a great deal of attention in micro-electro-mechanical system (MEMS) integration due to its composition-dependent tunability in optical, electronic and mechanical properties. In this work, silicon oxynitride films with different oxygen and nitrogen content were deposited by RF magnetron sputtering. Energy dispersive X-ray (EDX) spectroscopy and Fourier-transform infrared (FT-IR) spectroscopy were employed to characterize the SiON films with respect to stoichiometric composition and atomic bonding structure. Time-dependent plastic deformation (creep) of SiON films were investigated by depth-sensing nanoindentation at room temperature. Young’s modulus and indentation-hardness were found correlated with the nitrogen/oxygen ratio in SiON films. Results from nanoindentation creep indicated that plastic flow was less homogenous with increasing nitrogen content in film composition. Correspondingly, a deformation mechanism based on atomic bonding structure and shear transformation zone (STZ) plasticity theory was proposed to interpret creep behaviors of sputtered SiON films.
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Nanoindentation stress−strain curves of plasma-enhanced chemical vapor deposited silicon oxide thin films
Z. Cao# and X. Zhang* Thin Solid Films, 2008, 516(8): 1941-1951 +AbstractPlasma-enhanced chemical vapor deposited (PECVD) silicon oxide (SiOx) thin films have been widely used in Micro/Nano Electro Mechanical Systems to form electrical and mechanical components. In this paper, we explore the use of nanoindentation techniques as a method of measuring equivalent stress–strain curves of the PECVD SiOx thin films. Four indenter tips with different geometries were adopted in our experiments, enabling us to probe the elastic, elasto-plastic, and fully plastic deformation regimes of the PECVD SiOx thin films. The initial yielding point (σI) and stationary yielding point (σII) are separately identified for the as-deposited and annealed PECVD SiOx thin films, as well as a standard fused quartz sample. Based on the experimental results, a shear transformation zone based amorphous plasticity theory is applied to depict the plastic deformation mechanism in the PECVD SiOx.
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Nanoindentation Creep of Plasma-Enhanced Chemical Vapor Deposited Silicon Oxide Thin Films
Z. Cao# and X. Zhang* Scripta Materialia, 2007, 56(3): 249-252 +AbstractThe time-dependent plastic properties of both as-deposited and annealed plasma-enhanced chemical vapor deposited (PECVD) silicon oxide (SiOx) thin films were probed by nanoindentation creep tests at room temperature. Our experiments found a strong size effect in the creep responses of the as-deposited PECVD SiOx thin films, which was much reduced after annealing. Based on the experimental results, the deformation mechanism is depicted by the “shear transformation zone” (STZ) based amorphous plasticity theories.
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Size-dependent creep behaviour of plasma-enhanced chemical vapour deposited silicon oxide films
Z. Cao# and X. Zhang* Journal of Physics D: Applied Physics, 2006, 39(23): 5054-5063 +AbstractThe time-dependent plastic deformation (creep) behaviours of both as-deposited and annealed plasma-enhanced chemical vapour deposited (PECVD) silicon oxide (SiOx) films were probed by nanoindentation load relaxation tests at room temperature. Our experiments found a strong size effect in the creep responses of the as-deposited PECVD SiOx thin films, which was much reduced after rapid thermal annealing. Based on the experimental results, the deformation mechanism is depicted by the ‘shear transformation zone’ (STZ)-based amorphous plasticity theories. The physical origin of the STZ is elucidated and linked with the shear banding dynamics. It is postulated that the high strain gradient at shallow indentation depths may be responsible for the reduction in the stress exponent n = ∂ log(strain rate)/∂ log(stress), characteristic of a more homogeneous flow behaviour.
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Experiments and theory of thermally-induced stress relaxation in amorphous dielectric films for MEMS and IC applications
Z. Cao# and X. Zhang* Sensors and Actuators A: Physical, 2006, 127(2): 221-227 +AbstractPlasma-enhanced chemical vapor deposited (PECVD) silane-based silicon oxide (SiOx) films were chosen as an example to study the thermally-induced stress relaxation phenomena of amorphous dielectric films. Wafer curvature was measured optically both during and after various thermal conditions, including temperature cycling, constant peak temperature annealing, and varying peak temperature annealing experiments. From these measurements, we are able to obtain a complete stress evolutional history in the thin film, and further derive a series of mechanical/material properties such as viscoelasticity, density and viscosity, coefficient of thermal expansion (CTE), etc. We found that the stress in the amorphous silicon oxide films is sensitive to both viscosity and density changes. Stress relaxation was then theoretically investigated by a viscoelastic model, which was associated with a defects-based microstructural causal mechanism. Our theoretical model elucidates defects movement and consequent microstructure rearrangement as a source of damping, accompanied by viscous flow. This theory was applied to explain a series of experimental results, including stress hysteresis generation and reduction, stress relaxation, and CTE changes, etc.
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Microbridge testing of plasma-enhanced chemical-vapor deposited silicon oxide films on silicon wafers
Z. Cao#, T-Y Zhang, X. Zhang* Journal of Applied Physics, 2005, 97(10): 104909 +AbstractPlasma-enhanced chemical-vapor deposited (PECVD) silane-based oxides (SiOx) have been widely used in both microelectronics and microelectromechanical systems (MEMS) to form electrical and/or mechanical components. In this paper, a nanoindentation-based microbridge testing method is developed to measure both the residual stresses and Young’s modulus of PECVD SiOx films on silicon wafers. Theoretically, we considered both the substrate deformation and residual stress in the thin film and derived a closed formula of deflection versus load. The formula fitted the experimental curves almost perfectly, from which the residual stresses and Young’s modulus of the film were determined. Experimentally, freestanding microbridges made of PECVD SiOx films were fabricated using the silicon undercut bulk micromachining technique. Some microbridges were subjected to rapid thermal annealing (RTA) at a temperature of 400 °C, 600 °C, or 800 °C to simulate the thermal process in the device fabrication. The results showed that the as-deposited PECVD SiOx films had a residual stress of –155 ± 17 MPa and a Young’s modulus of 74.8 ± 3.3 GPa. After the RTA, Young’s modulus remained relatively unchanged at around 75 GPa, however, significant residual stress hysteresis was found in all the films. A microstructure-based mechanism was then applied to explain the experimental results of the residual stress changes in the PECVD SiOx films after the thermal annealing.
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Density change and viscous flow during structural relaxation of plasma-enhanced chemical-vapor-deposited silicon oxide films
Z. Cao# and X. Zhang* Journal of Applied Physics, 2004, 96(8): 4273-4280 +AbstractThe structural relaxation of plasma-enhanced chemical-vapor-deposited (PECVD) silane-based silicon oxide films during thermal cycling and annealing has been studied using wafer curvature measurements. These measurements, which determine stress in the amorphous silicon oxide films, are sensitive to both plastic deformation and density changes. A quantitative case study of such changes has been done based upon the experimental results. A microstructure-based mechanism elucidates seams as a source of density change and voids as a source of plastic deformation, accompanied by a viscous flow. This theory was then used to explain a series of experimental results that are related to thermal cycling as well as annealing of PECVD silicon oxide films including stress hysteresis generation and reduction and coefficient of thermal-expansion changes. In particular, the thickness effect was examined; PECVD silicon oxide films with a thickness varying from 1 to 40 µm were studied, as certain demanding applications in microelectromechanical systems require such thick films serving as heat∕electrical insulation layers.
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| Ph.D. Dissertation |
| Mechanical behaviors of PECVD dielectric films for MEMS applications Zhiqiang Cao, Ph.D. Dissertation, Boston University (Advisor: Xin Zhang; January 2007) |
MEMS Micropumps for Cryogenic Heat Transport
In micro-satellites, a wide array of delicate instruments must be integrated into a compact and constrained space, presenting significant challenges in thermal management, particularly for active and remote cooling. Silicon-based micropump arrays have emerged as an attractive solution due to their fabrication simplicity, minimal cryogen charge requirements, and capacity to maintain instruments within a narrow cryogenic temperature range. The performance and longevity of these micropumps are critically dependent on two key factors: pumping capacity, which relates to diaphragm deflection, and reliability, which is governed by mechanical stress and fatigue behavior. Both characteristics are heavily influenced by the silicon diaphragm, one of the most essential components of the system. This research focuses on evaluating the pumping capacity and operational reliability of silicon-based micropumps under cryogenic conditions, specifically for micro-satellite applications. Fatigue testing was performed over 1.8 million cycles without evidence of structural degradation, demonstrating the suitability of silicon as a robust and reliable material for long-duration operation in extreme cryogenic environments.
| Representative Publications (# denotes supervised by X. Zhang; * denotes corresponding author: X. Zhang) |
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Pumping capacity and reliability of cryogenic micro-pump for micro-satellite applications
X. Zhang*, Y. Zhao#, B. Li, and D. Ludlow# Journal of Micromechanics and Microengineering, 2004, 14(10): 1421-1429 +AbstractIn micro-satellites, delicate instruments are compacted into a limited space. This raises concerns of active cooling and remote cooling. Silicon based micro-pump arrays are employed thanks to manufacturing simplicity, a small cryogen charge, etc, and keep the instruments within a narrow cryogenic temperature range. The pumping capacity and reliability of the micro-pump are critical in terms of heat balance calculation and lifetime evaluation. The pumping capacity is associated with the diaphragm deflection while the reliability is associated with stress and fatigue. Both of them heavily depend on the silicon diaphragm, one of the key components. This paper examines the pumping capacity and reliability of the micro-pump under cryogenic temperature for micro-satellite applications. In this work, differential pressure was used for the actuation of a single-crystal silicon diaphragm. Diaphragm deflection and stress distribution were achieved using interferometry and micro-Raman spectroscopy, respectively. As a result, smaller pumping capacity was derived under cryogenic temperature, compared to that under room temperature, indicating a stiffer material. From stress mapping, the edge centers were believed to be the most vulnerable to fracture, which was further validated by analyzing the fracture diaphragm. Moreover, a fatigue testing was conducted for 1.8 million cycles with no damage found, verifying silicon as a viable material for long time operation in a cryogenic environment.
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| M.S. Thesis |
| Study of a silicon micropump for use in circulating coolant in a cryogenic refrigeration system Daryl Ludlow, M.S. Thesis, Boston University (Advisor: Xin Zhang; May 2003) |
MicroEngine: Structures and Devices
This body of work demonstrated the feasibility of silicon-based gas turbine engines at the microscale by realizing fully integrated microfabricated structures capable of combustion, energy conversion, and high-speed rotation. Using deep reactive ion etching (DRIE) and precision wafer bonding, complex multi-wafer assemblies were developed to incorporate fuel plenums, injectors, catalytic and non-catalytic combustors, and static turbine components–all within volumes smaller than a cubic centimeter. Stable hydrogen and hydrocarbon combustion was sustained in micromachined chambers, achieving exit gas temperatures exceeding 1600 K—marking one of the first demonstrations of sustained microscale flames in silicon. Microfabricated rotors, supported by gas-lubricated or self-acting thrust bearings, reached rotational speeds above one million RPM, delivering power densities comparable to conventional turbomachinery. Additional innovations included thin-film resistive igniters and through-wafer electrical interconnects that enabled localized heating and sensing. Together, these advances established the potential of MEMS-based turbomachinery for compact, high-speed energy conversion and propulsion systems.
| Representative Publications (# denotes supervised by X. Zhang; * denotes corresponding author: X. Zhang) |
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High-speed microfabricated silicon turbomachinery and fluid film bearings
L.G. Frechette, S.A. Jacobson, K.S. Breuer, F.F. Ehrich, R. Ghodssi, R. Khanna, C.W. Wong, X. Zhang, M.A. Schmidt, A.H. Epstein Journal of Microelectromechanical Systems, 2005, 14(1): 141-152 +AbstractA single-crystal silicon micromachined air turbine supported on gas-lubricated bearings has been operated in a controlled and sustained manner at rotational speeds greater than 1 million revolutions per minute, with mechanical power levels approaching 5 W. The device is formed from a fusion bonded stack of five silicon wafers individually patterned on both sides using deep reactive ion etching (DRIE). It consists of a single stage radial inflow turbine on a 4.2-mm diameter rotor that is supported on externally pressurized hydrostatic journal and thrust bearings. This work presents the design, fabrication, and testing of the first microfabricated rotors to operate at circumferential tip speeds up to 300 m/s, on the order of conventional high performance turbomachinery. Successful operation of this device motivates the use of silicon micromachined high-speed rotating machinery for power microelectromechanical systems (MEMS) applications such as portable energy conversion, micropropulsion, and microfluidic pumping and cooling.
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A self-acting gas thrust bearing for high-speed microrotors
C.W. Wong, X. Zhang, S.A. Jacobson, A.H. Epstein Journal of Microelectromechanical Systems, 2004, 13(2): 158-164 +AbstractMicromachines rotating at high speeds require low drag bearings with adequate load capacity and stability. Such bearings must be compatible with the capabilities of microfabrication technology. A self-acting (hydrodynamic) gas thrust bearing was designed, fabricated and tested on a silicon microturbine. Conventional thrust bearing design techniques were adapted from macroscale literature. Microbearing design charts are presented that relate bearing performance to geometry. Such bearings exhibit a design tradeoff between load bearing capability and maximum operating speed (as limited by instabilities). The specific geometry described herein was intended to replace externally pressurized, hydrostatic thrust bearings in an existing device (a 4-mm-diameter silicon microturbine), thus the hydrodynamic bearing design was constrained to be compatible in geometry and fabrication process. The final design consisted of 2.2-µm deep by 40-µm wide spiral grooves around the 700-µm diameter bearing. The bearings were fabricated in silicon with standard RIE and DRIE techniques. Test devices demonstrated lift-off and operation up to 450,000 rpm with a load capacity of 0.03 N. Measurements of load capacity and stiffness were consistent with the analysis.
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High power density silicon combustion systems for micro gas turbine engines
C.M. Spadaccini, A. Mehra, J. Lee, X. Zhang, S. Lukachko, I.A. Waitz Journal of Engineering for Gas Turbines and Power, 2003, 125(3): 709-719 +AbstractAs part of an effort to develop a microscale gas turbine engine for power generation and micropropulsion applications, this paper presents the design, fabrication, experimental testing, and modeling of the combustion system. Two radial inflow combustor designs were examined; a single-zone arrangement and a primary and dilution-zone configuration. Both combustors were micromachined from silicon using deep reactive ion etching (DRIE) and aligned fusion wafer bonding. Hydrogen-air and hydrocarbon-air combustion were stabilized in both devices, each with chamber volumes of 191 mm3. Exit gas temperatures as high as 1800 K and power densities in excess of 1100 MW/m3 were achieved. For the same equivalence ratio and overall efficiency, the dual-zone combustor reached power densities nearly double that of the single-zone design. Because diagnostics in microscale devices are often highly intrusive, numerical simulations were used to gain insight into the fluid and combustion physics. Unlike large-scale combustors, the performance of the microcombustors was found to be more severely limited by heat transfer and chemical kinetics constraints. Important design trades are identified and recommendations for microcombustor design are presented.
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Igniters and temperature sensors for a micro-scale combustion system
X. Zhang, A. Mehra, A.A. Ayon, I.A. Waitz Sensors and Actuators A: Physical, 2003, 103(1-2): 253-262 +AbstractThis paper presents the development of micro-fabricated “on-chip” polysilicon igniters and temperature sensors for the combustion system of a micro-gas turbine engine. We have reported the design and fabrication results of a novel through-wafer interconnect scheme that could greatly facilitate electrical contacts in multi-level MEMS devices by allowing direct electrical access to the backside of a wafer. This paper presents the results of a further effort that uses these interconnects to make electrical contacts to a thin-film polysilicon resistor so as to evaluate its ignition capability and its use as a wall temperature sensor for the micro-gas turbine engine. An application of the through-wafer interconnects to a concept demonstration of thin-film polysilicon resistive igniters for the micro-engine showed that it was possible to initiate combustion and locally raise the temperature of the igniter to 900 °C so long as the chip is thermally isolated. The results were found to be in good agreement with the predictions of an FEM thermal model. The possibility of using the resistors as temperature sensors is also examined. The non-linear variation of polysilicon resistivity with annealing temperatures due to complex effects resulting from dopant atom segregation, secondary grain growth and crystallographic relaxation reduced the operating range of the sensors to 450 °C.
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Preliminary development of a hydrocarbon-fueled catalytic micro-combustor
C.M. Spadaccini, X. Zhang, C.P. Cadou, N. Miki, I.A. Waitz Sensors and Actuators A: Physical, 2003, 103(1-2): 219-224 +AbstractThis paper reports development of a hydrocarbon-fueled micro-combustion system for a micro-scale gas turbine engine for power generation and micro-propulsion applications. A three-wafer catalytic combustor was fabricated and tested. Efficiencies in excess of 40% were achieved for ethylene–air and propane–air combustion. A fabrication process for a six-wafer catalytic combustor was developed and this device was successfully constructed.
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A six-wafer combustion system for a silicon micro gas turbine engine
A. Mehra, X. Zhang, A.A. Ayon, I.A. Waitz, M.A. Schmidt, C.M. Spadaccini Journal of Microelectromechanical Systems, 2000, 9(4): 517-527 +AbstractAs part of a program to develop a micro gas turbine engine capable of producing 10–50 W of electrical power in a package less than one cubic centimeter in volume, we present the design, fabrication, packaging, and experimental test results for the 6-wafer combustion system for a silicon microengine. Comprising the main nonrotating functional components of the engine, the device described measures 2.1 cm × 2.1 cm × 0.38 cm and is largely fabricated by deep reactive ion etching through a total thickness of 3800 µm. Complete with a set of fuel plenums, pressure ports, fuel injectors, igniters, fluidic interconnects, and compressor and turbine static airfoils, this structure is the first demonstration of the complete hot flow path of a multilevel micro gas turbine engine. The 0.195 cm3 combustion chamber is shown to sustain a stable hydrogen flame over a range of operating mass flows and fuel-air mixture ratios and to produce exit gas temperatures in excess of 1600 K. It also serves as the first experimental demonstration of stable hydrocarbon microcombustion within the structural constraints of silicon. Combined with longevity tests at elevated temperatures for tens of hours, these results demonstrate the viability of a silicon-based combustion system for micro heat engine applications.
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Through-wafer electrical interconnect for multilevel microelectromechanical system devices
A. Mehra, X. Zhang, A.A. Ayon, I.A. Waitz, M.A. Schmidt Journal of Vacuum Science & Technology B, 2000, 18(5): 2583-2589 +AbstractThis article reports the design, fabrication, and experimental demonstration of through-wafer interconnects capable of allowing direct electrical access to the interior of a multilevel microelectromechanical system device. The interconnects exploit the ability to conformally coat a high aspect ratio trench with a thick layer of tetraethylorthosilicate to isolate a through-wafer silicon plug that can provide electrical contact across two sides of a low resistivity wafer. They hold the potential of a tenfold reduction in the parasitic capacitance of previously reported through-wafer vias, and are shown to make reliable contacts to the back side of a polysilicon resistive element. The high temperature capability of the interconnects is also examined, however, their application is found to be limited to temperatures below 1000°C due to localized degradation near the isolating trenches.
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MicroEngine: Fabrication and Characterization
This work advanced the microfabrication techniques necessary to construct three-dimensional silicon-based microsystems with robust mechanical and thermal performance. Deep reactive ion etching (DRIE) was optimized to create high-aspect-ratio trenches up to 500 µm deep, with improved sidewall smoothness and profile control. Process refinements addressed both global and local etch non-uniformity—critical for minimizing rotor imbalance in high-speed rotating devices. Multi-stack silicon wafer bonding was systematically developed and characterized to support complex multilayer assemblies, with particular attention to interface quality, defect propagation, and thermomechanical stability. The behavior of thick plasma-enhanced chemical vapor deposition (PECVD) oxide films was extensively studied to understand how deposition and thermal processing affect residual stress, fracture risk, and wafer bowing. Through detailed characterization using profilometry, interferometry, electron microscopy, and fracture mechanics modeling, this research established key relationships between processing parameters and material behavior. These fabrication strategies enabled the reliable construction of MEMS structures for applications in energy conversion, sensing, and actuation.
| Representative Publications (# denotes supervised by X. Zhang; * denotes corresponding author: X. Zhang) |
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Intrinsic stress generation and relaxation of plasma-enhanced chemical vapor deposited oxide during deposition and subsequent thermal cycling
K-S Chen, X. Zhang, S-Y Lin Thin Solid Films, 2003, 434(1-2): 190-202 +AbstractThis paper discusses thermo-mechanical behavior of plasma-enhanced chemical vapor deposited oxide films during and after post-deposition thermal cycling and annealing. A series of thermal cycling experiments were conducted with various types of oxide and nitride films to elucidate the control mechanism of intrinsic stress generation and to develop engineering solutions for improving reliability of microelectromechanical system fabrication processes. Tensile intrinsic stress generation was observed during thermal cycling and the depletion of hydrogen and the shrinkage of micro voids existing in the oxide films was postulated as a major control mechanism for the stress generation and was modeled by an energy-based formulation. Subsequent experiments indicated that annealing at high temperature could reduce this intrinsic tensile stress. Both stress generation and relaxation were modeled to guide the development of engineering solutions to maintain structural integrity and improve fabrication performance.
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Enhancement of rotordynamic performance of high-speed micro-rotors for power MEMS applications by precision deep reactive ion etching
N. Miki, C.J. Teo, L. Ho, X. Zhang Sensors and Actuators A: Physical, 2003, 104(3): 263-267 +AbstractHigh-precision fabrication is indispensable for high-speed silicon micro-rotors for power MEMS applications so as to minimize the rotor imbalance that deteriorates the rotor performance. Etch variation of deep reactive ion etch (DRIE) process results in differences in rotor blade heights and thus rotor imbalance. A Fourier transform of the etch non-uniformity along the rotor circumference revealed the global etch variation across the wafer and local variations in etch rates depending on the concentration or proximity of the patterned geometry. Rotor imbalance arising from the global etch variation of DRIE process was estimated, which compared favorably to results obtained from spinning experiments. The global etch non-uniformity which culminates in rotor imbalance could be alleviated to 0.25% across a rotor of 4.2 mm diameter by optimizing the plasma chamber pressure. The developed DRIE recipe successfully reduced the rotor imbalance and thus enhanced the rotordynamic performance. The manufacturing processes presented herein are readily applicable to the constructions of other microstructures containing intricate geometries and large etched areas.
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Characterization of silicon wafer bonding for Power MEMS applications
A.A. Ayon, X. Zhang, K. Turner, D. Choi, B. Miller, S.F. Nagle, S.M. Spearing Sensors and Actuators A: Physical, 2003, 103(1-2): 1-8 +AbstractThis paper reports the investigation of low-temperature silicon wafer fusion bonding for MEMS applications. A bonding process utilizing annealing temperatures between 400 and 1100 °C was characterized. The silicon–silicon bonded interface was analyzed by infrared transmission (IT) and transmission electron microscopy (TEM) and the bond toughness was quantified by a four-point bending–delamination technique.
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| Thermo-mechanical behavior of thick PECVD oxide films for power MEMS applications X. Zhang, K-S Chen, S.M. Spearing Sensors and Actuators A: Physical, 2003, 103(1-2): 263-270 +Abstracthis paper presents residual stress characterization and fracture analysis of thick plasma-enhanced chemical vapor deposition (PECVD) oxide films. The motivation for this work is to elucidate the factors contributing to residual stress, deformation and fracture of silicon oxide films so as to refine the microfabrication process for power microelectromechanical systems (MEMS) manufacturing. The stress–temperature behavior of PECVD oxide films during annealing was studied. Analyses of residual stress relaxation, intrinsic stress generation, and the large deformation response of wafers were carried out. Preliminary experimental observations and estimates of oxide fracture were also provided.
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Multi-stack silicon-direct wafer bonding for 3D MEMS manufacturing
N. Miki, X. Zhang, R. Khanna, A.A. Ayon, D. Ward, S.M. Spearing Sensors and Actuators A: Physical, 2003, 103(1-2): 194-201 +AbstractMulti-stack wafer bonding is one of the most promising fabrication techniques for creating three-dimensional (3D) microstructures. However, there are several bonding issues that have to be faced and overcome to build multilayered structures successfully. Among these are: (1) chemical residues on surfaces to be bonded originating from the fabrication processes prior to bonding; (2) increased stiffness due to multiple bonded wafers and/or thick wafers; (3) bonding tool effects; (4) defect propagation to other wafer-levels after high-temperature annealing cycles. The problems and the solutions presented here are readily applicable to any microelectromechanical systems project involving the fabrication of multi-stack structures of two or more wafers containing intricate geometries and large etched areas.
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Effect of process parameters on the surface morphology and mechanical performance of silicon structures after deep reactive ion etching (DRIE)
K-S Chen, A.A. Ayon, X. Zhang, S.M. Spearing Journal of Microelectromechanical Systems, 2002, 11(3): 264-275 +AbstractThe ability to predict and control the influence of process parameters during silicon etching is vital for the success of most MEMS devices. In the case of deep reactive ion etching (DRIE) of silicon substrates, experimental results indicate that etch performance as well as surface morphology and post-etch mechanical behavior have a strong dependence on processing parameters. In order to understand the influence of these parameters, a set of experiments was designed and performed to fully characterize the sensitivity of surface morphology and mechanical behavior of silicon samples produced with different DRIE operating conditions. The designed experiment involved a matrix of 55 silicon wafers with radius hub flexure (RHF) specimens which were etched 10 min under varying DRIE processing conditions. Data collected by interferometry, atomic force microscopy (AFM), profilometry, and scanning electron microscopy (SEM), was used to determine the response of etching performance to operating conditions. The data collected for fracture strength was analyzed and modeled by finite element computation. The data was then fitted to response surfaces to model the dependence of response variables on dry processing conditions.
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Residual stress and fracture in thick tetraethylorthosilicate (TEOS) and silane-based PECVD oxide films
X. Zhang, K-S Chen, R. Ghodssi, A.A. Ayon, S.M. Spearing Sensors and Actuators A: Physical, 2001, 91(3): 373-380 +AbstractThis paper reports residual stress measurements and fracture analysis in thick tetraethylorthosilicate (TEOS) and silane-based plasma enhanced chemical vapor deposition (PECVD) oxide films. The measured residual stress depended strongly on thermal process parameters; dissolved hydrogen gases played an important role in governing intrinsic stress. The tendency to form cracks was found to be a strong function of film thickness and annealing temperature. Critical cracking temperature was predicted using mixed mode fracture mechanics, and the predictions provide a reasonable match to experimental observations. Finally, engineering solutions were demonstrated to overcome the problems caused by wafer bow and film cracks. The results of this study should be able to provide important insights for the design of fabrication processes for MEMS devices requiring high temperature processing of films.
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Anisotropic silicon trenches 300−500 µm deep employing time multiplexed deep etching (TMDE)
A.A. Ayon, X. Zhang, R. Khanna Sensors and Actuators A: Physical, 2001, 91(3): 381-385 +AbstractThis paper reports solutions to the problem of profile control of narrow trenches in the vicinity of wider topographic features, as well as for etching high aspect ratio, anisotropic trenches with depths in the 300–500 µm range, and of widths between 12 to 18 µm. Additionally, specific operating conditions are discussed to address uniformity variations across dies with diameters in excess of 4200 µm.
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